Packaged microelectronic component assemblies

ABSTRACT

Various aspects of the present invention provide microelectronic component assemblies and methods for packaging such assemblies. In one example, a microelectronic component assembly includes a substrate and a microelectronic component. This substrate has a recess in its back face and a communication opening extending through a base of the recess. This microelectronic component has an active face positioned within the substrate recess, a back face positioned outside the substrate recess, and a plurality of component contacts carried by the component active face and electrically coupled to the substrate contacts through the communication opening. This exemplary microelectronic component assembly may also include a mold compound which encapsulates the microelectronic component and a portion of the substrate active face. The mold compound may also substantially fill a gap between the periphery of the microelectronic component and a sidewall of the recess.

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application claims foreign priority benefits of SingaporeApplication No. 200204998-9 filed Aug. 19, 2002, the entirety of whichis incorporated herein by reference.

BACKGROUND

[0002] The present invention relates to microelectronic components. Inparticular, some aspects of the invention relate to packagedmicroelectronic component assemblies, e.g., BOC packages, and substratesfor use in such packaged assemblies.

[0003] Many packaged microelectronic devices have a substrate, amicroelectronic die attached to the substrate, and a protective coveringencasing the die. The protective covering is generally a plastic orceramic compound that can be molded to form a casing over the die. Themicroelectronic die can be a memory device, a microprocessor, or anothertype of microelectronic component having integrated circuitry. Severaltypes of packaged devices also include bond pads on the substrate thatare coupled to the integrated circuitry of the die. The bond pads mayalternatively be coupled to pins or other types of terminals that areexposed on the exterior of the microelectronic device for connecting thedie to buses, circuits and/or other microelectronic assemblies.

[0004] A significant limiting factor for manufacturing packagedmicroelectronic devices is encapsulating the die with the protectivecovering. The dies are sensitive components that should be protectedfrom physical contact and environmental conditions to avoid damaging thedie. The protective casing encapsulating the die, therefore, should sealthe die from the environmental factors (e.g., moisture) and shield thedie from electrical and mechanical shocks.

[0005] One conventional technique for encapsulating the die is known as“transfer molding,” which involves placing the die and at least aportion of the substrate in a cavity of a mold and then injecting athermosetting material into the cavity. The thermosetting material flowsover the die on one side of the substrate until it fills the cavity, andthen the thermosetting material is cured so that it hardens into asuitable protective casing for protecting the die. The protective casingshould not have any voids over the die because contaminants from themolding process or environmental factors could damage the die. Thethermosetting material, moreover, should not cover a ball pad array onthe substrate or damage any electrical connections between the die andthe substrate.

[0006] One drawback of transfer molding is that it is difficult to avoidproducing voids in the thermosetting material. In one particulartransfer-molding technique, a first protective casing is formed over thedie on a first surface of the substrate, and a second protective casingis formed over contacts on the die and wire-bond connections on a secondsurface of the substrate. The first casing is formed from a first flowof the thermosetting compound, and the second casing is formed from asecond flow of the thermosetting compound. This transfer-moldingtechnique may result in voids along either the first or second surfaceof the substrate because the first and second flows may counter oneanother as they flow through the mold. Other transfer-molding techniquesmay also produce voids in the protective casing over the die because theflow of the thermosetting material in the mold may produce a first flowsection that moves in a direction counter to a second flow section.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007]FIG. 1 is a top cutaway isometric view of a microelectroniccomponent assembly in accordance with one embodiment of the invention.

[0008]FIG. 2 is a schematic transverse cross-sectional view illustratingone stage in the manufacture of the microelectronic component assemblyof FIG. 1.

[0009]FIG. 3 schematically illustrates a subsequent stage in themanufacture of the microelectronic component assembly of FIG. 1.

[0010]FIG. 4 is a schematic cross-sectional view of a packagedmicroelectronic component in accordance with an embodiment of theinvention.

[0011]FIG. 5 is a schematic side view of the packaged microelectroniccomponent of FIG. 4.

[0012]FIG. 6 schematically illustrates a stage in packaging themicroelectronic component assembly of FIG. 4.

[0013]FIG. 7 is a schematic illustration corresponding to across-sectional view taken along line 7-7 of FIG. 6.

DETAILED DESCRIPTION

[0014] A. Overview

[0015] Various embodiments of the present invention providemicroelectronic component assemblies and methods for packagingmicroelectronic component assemblies. The terms “microelectroniccomponent” and “microelectronic component assembly” may encompass avariety of articles of manufacture, including, e.g., SIMM, DRAM,flash-memory, ASICs, processors, flip chips, ball grid array (BGA)chips, or any of a variety of other types of microelectronic dies,assemblies, or components therefor.

[0016] In one embodiment, the present invention provides amicroelectronic substrate that includes an active face, a back face, anoutwardly-open recess in the back face, and a communication opening. Theactive face carries a plurality of electrical contacts. The back face isspaced from the active face. The recess has a sidewall and a base thatis spaced from the active face. The communication opening extendsthrough the base to the active surface and is proximate to each of theelectrical contacts and spaced from the recess sidewall by a die attachwidth.

[0017] A microelectronic component assembly in accordance with anotherembodiment of the invention includes a substrate and a microelectroniccomponent. The substrate has an active face carrying an array ofsubstrate contacts, a back face spaced from the active face, a recess inthe back face, and a communication opening extending through a base ofthe recess to the active face. The microelectronic component has anactive face positioned within the substrate recess, a back facepositioned outside the substrate recess, and a plurality of componentcontacts carried by the component active face that are electricallycoupled to the substrate contacts.

[0018] An alternative embodiment provides a microelectronic componentassembly including a substrate, a microelectronic component, and a moldcompound. The substrate has an active face carrying an array ofsubstrate contacts, an outwardly open recess having a sidewall, and acommunication opening extending through a base of the recess to theactive face. The microelectronic component has an active face, aperiphery, and a plurality of component contacts carried by thecomponent active face that are electrically coupled to the substratecontacts. The component active face is juxtaposed with the base of therecess and the component periphery is juxtaposed with the sidewalls ofthe recess, with a gap being defined between the periphery and thesidewalls. The mold compound encapsulates the microelectronic componentand covers a portion of the substrate active face. The mold compoundcomprises a filler having a mean particle size larger than a width ofthe gap.

[0019] A method of manufacturing a microelectronic component assembly inaccordance with another embodiment of the invention includes juxtaposinga microelectronic component with a substrate. The substrate has anactive face, a back face, and a recess in the back face having a basethat is spaced from the active face. The microelectronic component isattached to the substrate with an active surface of the microelectroniccomponent positioned within the recess and juxtaposed with the base ofthe recess. A component contact carried by the component active face iselectrically coupled to a substrate contact carried by the substrateactive face. The microelectronic component is encapsulated in a moldcompound, which covers a back face of the microelectronic component, atleast a portion of the substrate back face, and at least a portion ofthe substrate active face.

[0020] For ease of understanding, the following discussion is brokendown into three areas of emphasis. The first section discusses certainunpackaged microelectronic component assemblies and methods ofmanufacturing such assemblies. The second section relates to selectpackaged microelectronic component assemblies and methods in accordancewith other embodiments of the invention.

[0021] B. Unpackaged Microelectronic Component Assemblies

[0022]FIG. 1 is a top cutaway isometric view of a microelectroniccomponent assembly 10 in accordance with one embodiment of theinvention. This microelectronic component assembly 10 generally includesa substrate 20 and a microelectronic component 50 attached to thesubstrate 20 by an adhesive 70. The particular embodiment of thesubstrate shown in FIGS. 1-3 has a first end 21, a second end 22opposite the first end, a back face 23, and an active face 24 oppositethe back face 23. The active face 24 is spaced from the back face 23 todefine a thickness T_(s) of the substrate 20. The substrate 20 mayfunction as an interposing device that provides an array of ball padsfor coupling small contacts on the microelectronic component to anothertype of microelectronic component. In the embodiment shown in FIG. 1,the active face 24 of the substrate 20 includes a first array ofcontacts, e.g., ball pads 27, and a second array of substrate contacts28 proximate a communication opening 36 in the substrate. Each of theball pads may be connected to an associated one of the substratecontacts 28 by a trace 29 or other type of conductive line.

[0023] The substrate 20 shown in FIG. 1 and schematically illustrated inFIGS. 2 and 3 also includes a recess 30 in the back face 23. The recess30 is rearwardly open (i.e., open downwardly in the orientation shown inFIGS. 1-3) and has a base 32 spaced from a plane of the back face 23 bya depth D₁ and a sidewall 34. The communication opening 36 extendsthrough a thickness D₂ of the substrate between the base 32 and theactive face 24. In the illustrated embodiment, the communication opening36 comprises an elongated slot that extends lengthwise along a medialportion of the substrate 20. The substrate 20 may also include a moldport 26 (FIG. 1) extending through the substrate 20 at a pass-throughlocation spaced from the recess 30 and the opening 36 toward the secondend 22 of the substrate 20.

[0024] The substrate 20 may be flexible or rigid and have any desiredconfiguration. The substrate 20 may be formed of materials commonly usedin microelectronic substrates, such as ceramic, silicon, glass,glass-filled resins, or combinations thereof. The substrate 20 can,alternatively, be formed of an organic material or other materialsuitable for printed circuit boards (PCBs). In one embodiment, thesubstrate 20 comprises a PCB such as an FR-4 PCB.

[0025] The depth D₁ of the recess 30 may be varied within a relativelybroad range. In one embodiment, the depth D₁ is no more than about 200μm; about 150-200 μm is expected to work well. In another embodiment,the depth D₁ of recess 30 is correlated to the thickness T_(s) of thesubstrate 20. In one particular implementation, the depth D₁ is abouthalf the thickness T_(s) of the substrate. For a substrate having athickness of about 0.4 millimeters (400 μm), for example, the depth D₁may be on the order of 200 μm. In another embodiment discussed below,the depth D₁ of the recess 30 is selected to position the plane of theback face 23 of the substrate with respect to the thickness of themicroelectronic component 50.

[0026] The distance D₂ between the base 32 of the recess 30 and theactive face 24 of the substrate 20 should be sufficient to carry theconductive traces 29 or any other circuitry included in the substrate20. In one embodiment, this distance D₂ is at least about 50 μm. Inanother embodiment, this distance D₂ is about 50-100 μm.

[0027] As shown in FIG. 2, the recess 30 has a transverse width W₁ thatis greater than a transverse width W₂ of the communication opening 36.This leaves a die attach width of the base 32 on each side of thecommunication opening 36. The die attach width in the illustratedembodiment is sufficient to receive and support the adhesive 70.

[0028] The most effective means for manufacturing the substrate 20 willdepend, at least in part, on the materials used in the substrate 20. Therecess 30 and the communication opening 36 may, for example, be formedby mechanical machining, laser machining (e.g., laser ablation), orphotoimaging techniques. In another embodiment, the recess 30 andopening 36 are integrally molded as part of the substrate 20.

[0029] In one particular manufacturing technique schematicallyrepresented in FIG. 2, the substrate 20 may comprise two or morelaminated layers. A first thickness D₁ of the substrate 20 may be formedfrom a first layer 42 or a stack of first layers. The balance of thethickness of the substrate D₂ may be formed from a second layer 44 or astack of second layers. The first layer 42 includes a recess opening 43through its entire thickness having an inner surface that defines thesidewalls 34 of the recess 30. The communication opening 36 passesthrough the entire thickness of the second layer 44 . The first layer 42(or stack of first layers) may be stacked with the second layer 44 (orstack of second layers) and laminated to one another. Such laminationtechniques are well-known in the art and need not be detailed here.Since the recess opening 43 through the first layer(s) 42 has a width W₁larger than the width W₂ of the communication opening 36 in the secondlayer(s) 44, an exposed surface of the second layer 44 (or the secondlayer adjacent the first layer) will define the base 32 of the recess30.

[0030] The microelectronic component 50 may comprise a singlemicroelectronic component or a subassembly of separate microelectroniccomponents. In the embodiment shown in FIGS. 1-3, the microelectroniccomponent 50 is typified as a microelectronic die. In one particularembodiment, the microelectronic component 50 comprises a memory module,e.g., SIMM, DRAM, or flash memory. The microelectronic component 50includes an array of component contacts 52 on an active face 51 of themicroelectronic component and an integrated circuit 54 (shownschematically in FIG. 1) coupled to the component contacts 52. Thecomponent contacts 52 are arranged on the active face 51 in an array,which may be a linear array, as shown, or any other array which isaccessible through the communication opening 36.

[0031] The microelectronic component 50 also includes a back face 53which is spaced from the active face 51 by a component thickness T_(c)and a periphery 56 that spans the component thickness T_(c). Assuggested in FIG. 2, the microelectronic component 10 may bemanufactured by juxtaposing the microelectronic component 50 with thesubstrate 20. In particular, the microelectronic component 50 may bealigned with the recess 30 in the substrate 20 with the component activeface 51 oriented toward the base 32 of the recess 30.

[0032] An adhesive 70 is disposed between the microelectronic component50 and the base 32 of the recess 30. The adhesive 70 may comprise a2-sided tape, a decal, or a quantity of an adhesive material stenciledor otherwise applied to the base 32 of the substrate recess 30 or theactive face 51 of the microelectronic component 50.

[0033] As shown in FIG. 3, the active face 51 of the microelectroniccomponent 50 may be attached to the base 32 of the recess 30 by theadhesive 70. A quantity of the adhesive 70 may extend along at least amajority of the length of the communication opening 36 (as shown in FIG.7). In this configuration, the active face 51 of the microelectroniccomponent 50 is positioned within the recess 30. The component thicknessT_(c) is greater than the depth D₁ (FIG. 2) of the recess 30. As aresult, the back face 53 of the microelectronic component 50 ispositioned outside of the recess 30 at a location spaced outwardly fromthe plane of the substrate back face 23. The distance between thecomponent back face 53 and the plane of the substrate back face 23 willdepend on the difference between the depth D₁ of the recess 30 and thecombined thickness of the adhesive 70 and the microelectronic component50. In one embodiment, these dimensions are selected to position theplane of the substrate back face 23 approximately halfway between theactive and back faces 51 and 53 of the microelectronic component 50.

[0034] For purposes of illustration, a microelectronic component 50having a component thickness T_(c) of about 300 μm may be attached tothe base 32 of the recess 30 by an adhesive tape 70 having a thicknessof about 50 μm. To position the back face 23 of the substrate abouthalfway between the active and back faces 51 and 53 of themicroelectronic component, the recess depth D₁ may be about 200 μm,i.e., 50 μm (adhesive 70) plus 150 μm (one-half of the 300 μm-componentthickness T_(c)).

[0035] Part of the height of the microelectronic component periphery 56may be received within the recess 30. This will juxtapose the componentperiphery 56 with the recess sidewall 34, defining a gap 40therebetween. The microelectronic component 50 may be substantiallycentered with respect to the base 32 of the recess 30, leaving a fairlyconstant gap width around the periphery 56 of the microelectroniccomponent 50.

[0036] In one embodiment, the transverse width W₁ (FIG. 2) of the recess30 is no more than 100 μm greater than the transverse width of themicroelectronic component 50. The difference between the longitudinalwidth of the recess 30 and the longitudinal length of themicroelectronic component 50 may be similarly matched. (FIG. 7 providesa schematic longitudinal cross-sectional view of the microelectroniccomponent assembly 10 in a mold 100.) This will yield an average gapwidth between the microelectronic component periphery 56 and the recesssidewall 34 of about 50 μm. In one embodiment, this gap width is betweenabout 30 μm and about 50 μm.

[0037] Once the microelectronic component 50 is attached to thesubstrate 20, the component contacts 52 may be coupled to the substratecontacts 28 by a plurality of connectors 60. In the illustratedembodiment, these connectors 60 are typified as wirebonds in which thebonding wire has a first end coupled to a component contact 52, a secondend coupled to a substrate contact 28, and a length which extendsthrough the communication opening 36.

[0038] The total height of the microelectronic component assembly 10 maybe less than conventional board-on-chip (BOC) designs, in which norecess 30 is provided and the chip is attached to a flat back surface ofthe board. Some embodiments of the microelectronic component assembly 10are particularly well-suited for inclusion in a packaged microelectroniccomponent assembly, too.

[0039] C. Packaged Microelectronic Component Assemblies

[0040]FIG. 5 is a side elevation view of a packaged microelectroniccomponent assembly 15 incorporating the microelectronic componentassembly 10 of FIGS. 1-3. FIG. 4 is a schematic cross-sectional viewtaken along line 44 of FIG. 5.

[0041] In FIGS. 4 and 5, the die 50 and a portion of the substrate 20have been encapsulated by a mold compound 80. The mold compound 80 canbe injected into a mold (not shown in FIGS. 4 and 5) to form a firstcasing 82 that encapsulates the die 50 and a second casing 84 thatsubstantially fills the communication opening 36. The first casing 82also covers a portion of the back surface 23 of the substrate 20, thegap 40 between the component periphery 56 and the recess sidewall 34,and may also substantially underfill the space between the componentactive face 51 and the base 32 of the recess 30. The second casing 84may also cover a portion of the substrate active surface 24, thesubstrate contacts 28, the connectors 60, and the component contacts 52.Any conventional microelectronic mold compound may be employed; suchcompounds are well known in the art and are commercially available froma number of suppliers.

[0042] The first casing 82 can be formed by injecting the mold compoundthrough a gate of a mold at the first end 21 of the substrate 20 so themold compound flows along the back face 23 of the substrate 20 in afirst direction (shown by arrow A). The second casing 84 may then beformed by driving a portion of the mold compound through the mold port26 toward the second end 22 of the substrate 20. The mold port 26defines a pass-through location that is spaced apart from the first end21 of the substrate 20 and the recess 30 to generate a second flow ofcompound along the active face 24 of the substrate 20 (shown by arrowB). The second flow of mold compound moves in a second direction awayfrom the second end 22 of the substrate 20 toward the first end 21.

[0043] In a conventional board-on-chip (BOC) package, the active surfaceof the die is spaced above the back surface of the substrate by thethickness of a die attach tape, which may be 50 μm or more. The processof fabricating such a conventional BOC package can be difficult becausethe mold compound may flow through the space between the chip and thesubstrate at the first end of the wire bonding slot. This leakage orcounterflow of mold compound would move counter to the second flow ofmold compound along the front face of the board. As a result, voids orother disparities may be created in the casing intended to encapsulatethe wire bonds.

[0044]FIG. 6 is a schematic transverse cross-sectional view of themicroelectronic component assembly 10 of FIGS. 1-3 in a mold 100. FIG. 7is a schematic longitudinal cross-sectional view taken along line 7-7 ofFIG. 6. The mold 100 includes a first mold section 105 and a second moldsection 150. The first mold section 105 has a first cavity 120 and thesecond mold section 150 has a second mold cavity 160. The second moldsection 150 is superimposed over the first mold section 105 so that thesecond cavity 160 is positioned over the first cavity 120 of the firstmold section 105.

[0045] Mold compound injected into the mold 100 (indicated by arrows F)will flow through a gate 110 into the first cavity 120. Thereafter, themold compound will flow through the mold port 26 and along the secondcavity 160 (arrow B). If so desired, a flow restrictor 115 may bedisposed at the end of the gate 110.

[0046] In conventional BOC packaging, the flow of mold compound into themold will encounter the periphery of the chip and be forced to flowupwardly over the entire thickness of the chip. In the embodimentillustrated in FIGS. 6 and 7, a portion of a thickness of themicroelectronic component 50 is received within the recess 30 of thesubstrate 20. The adhesive 70 is also received entirely within therecess 30. As a result, the mold compound flowing through the gate 110need only clear the portion of the microelectronic component 50extending outwardly beyond the back face 23 of the substrate 20. Thiscan appreciably improve the fluid dynamics of the mold compound flow inthe first cavity 120 (indicated by arrow A).

[0047] Disposing a portion of the microelectronic component 50 withinthe recess 30 of the substrate 20 can also limit, if not substantiallyeliminate, inadvertent flow of the mold compound between themicroelectronic component 50 and the substrate 20 adjacent the first end21 of the substrate 20. To pass from the first cavity 120 to the secondcavity 160 adjacent the gate 110, the mold compound would have to flowthrough the gap 40 between the component periphery 56 and the recesssidewall 34 near the first end 21 of the substrate 20. Thereafter, themold compound would have to flow between the active surface 51 of themicroelectronic component 50 and the base 32 of the recess 30. Thispresents a more tortuous path, restricting the inadvertent flow of themold compound along this pathway. Appropriate selection of the width ofthe gap 40 can further restrict this flow.

[0048] Conventional mold compounds include a flowable component, e.g., acurable resin, and a filler, which may comprise particulate silica orother relatively inexpensive materials. If so desired, the width of thegap 40 may be less than or equal to the mean particle size of thefiller. In one embodiment, the gap 40 is no wider than about 50 μm andthe filler in the mold compound has a mean particle size of 50 μm orgreater. In one specific embodiment, the width of the gap 40 is about30-50 μm and the mean particle size of the filler in the mold compoundis about 70 μm or greater. A gap width equal to or greater than the meanparticle size of the mold compound filler significantly limits thepassage of filler particles into the recess 30. This, in turn, canreduce or substantially eliminate problems which could arise if aparticle of the filler becomes wedged between the substrate 20 and theactive face 51 of the microelectronic component 50.

[0049] U.S. patent application Publication Ser. No. U.S. 2002/0016023(“Bolken”), the entirety of which is incorporated herein by reference,suggests a method and mold design which can limit the backflow of moldcompound from the first cavity 120 to the second cavity 160 adjacent thefirst end 21 of the substrate 20. In certain embodiments of thatdisclosure, the flow of mold compound into the first cavity isbifurcated to flow along opposite sides of the microelectronic die. Themold 100 of FIG. 7 includes an island 112 adjacent the gate 110. Asexplained in the Bolken publication, such an island 112 can split theinjection flow F into a first flow F₁ and a second flow F₂ and deliverthese flows F₁ and F₂ into the first cavity 120 through laterallyspaced-apart gates 110. Bifurcating the flow in this fashion can furtherlimit the backflow of mold compound from the first cavity 120 to thesecond cavity 160 adjacent the first end 21 of the substrate 20.

[0050] Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense as opposed to anexclusive or exhaustive sense; that is to say, in a sense of “including,but not limited to.” Words using the singular or plural number alsoinclude the plural or singular number respectively. When the claims usethe word “or” in reference to a list of two or more items, that wordcovers all of the following interpretations of the word: any of theitems in the list, all of the items in the list and any combination ofthe items in the list.

[0051] The above detailed descriptions of embodiments of the inventionare not intended to be exhaustive or to limit the invention to theprecise form disclosed above. While specific embodiments of, andexamples for, the invention are described above for illustrativepurposes, various equivalent modifications are possible within the scopeof the invention, as those skilled in the relevant art will recognize.For example, while steps are presented in a given order, alternativeembodiments may perform steps in a different order. Aspects of theinvention may also be useful in other applications, e.g., inmanufacturing lead-on-chip (LOC) microelectronic component assemblies.The various embodiments described herein can be combined to providefurther embodiments.

[0052] In general, the terms used in the following claims should not beconstrued to limit the invention to the specific embodiments disclosedin the specification, unless the above detailed description explicitlydefines such terms. While certain aspects of the invention are presentedbelow in certain claim forms, the inventors contemplate the variousaspects of the invention in any number of claim forms. Accordingly, theinventors reserve the right to add additional claims after filing theapplication to pursue such additional claim forms for other aspects ofthe invention.

1-43. (canceled)
 44. A method of manufacturing a microelectroniccomponent assembly, comprising: juxtaposing a microelectronic componentwith a substrate, the substrate having an active face, a back face, anda recess in the back face having a base that is spaced from the activeface; attaching the microelectronic component to the substrate with anactive face of the microelectronic component positioned within therecess and juxtaposed with the base of the recess; electrically couplinga component contact carried by the component active face to a substratecontact carried by the substrate active face; and applying a moldcompound to cover a back face of the microelectronic component, at leasta portion of the substrate back face, and at least a portion of thesubstrate active face with the mold compound.
 45. The method of claim 44wherein applying the mold compound comprises defining a mold cavitywithin which the microelectronic component and at least the recess ofthe substrate is positioned and delivering the mold compound to the moldcavity.
 46. The method of claim 44 wherein applying the mold compoundcomprises delivering the mold compound to a first portion of a moldcavity on a first side of the substrate and flowing the mold compound toa second portion of the mold cavity on an opposite side of the substratethrough a mold port extending through the substrate.
 47. The method ofclaim 44 wherein the substrate includes a communication opening throughthe bottom of the recess to the substrate active face and applying themold compound comprises flowing the mold compound through the substratevia a mold port extending through the substrate at a location spacedfrom the communication opening.
 48. The method of claim 44 wherein themicroelectronic component has a periphery spaced from an inner face ofthe recess by a gap, applying the mold compound comprising deliveringthe mold compound to a mold cavity, the mold compound comprising aflowable component and a filler having a mean particle size larger thana width of the gap.
 49. The method of claim 44 wherein electricallycoupling the component contact to the substrate contact comprisespassing a connector through an opening in the bottom of the recess. 50.The method of claims 44-49 wherein applying the mold compound comprisescovering the connector with the mold compound and substantially fillingthe opening with the mold compound.
 51. A method of manufacturing amicroelectronic component assembly, comprising: juxtaposing amicroelectronic component with a substrate, the substrate having anactive face, a back face, and a recess in the back face, wherein therecess has a sidewall and a base and the base is spaced from the activeface; attaching the microelectronic component to the substrate with anactive face of the microelectronic component positioned within therecess and juxtaposed with the base of the recess and with a peripheryof the microelectronic component being juxtaposed with the sidewall ofthe recess to define a gap therebetween; electrically coupling acomponent contact carried by the component active face to a substratecontact carried by the substrate active face; and covering a portion ofthe microelectronic component with a mold compound, the mold compoundincluding a first component and a filler having a mean particle size atleast as large as a width of the gap.
 52. The method of claim 51 whereincovering a portion of the microelectronic component comprises disposinga portion of the first component in the gap.
 53. The method of claim 51wherein covering a portion of the microelectronic component comprisesapplying the mold compound to cover a back face of the microelectroniccomponent, at least a portion of the substrate back face, and at least aportion of the substrate active face with the mold compound.
 54. Themethod of claim 51 wherein electrically coupling the component contactto the substrate contact comprises passing a connector through anopening in the bottom of the recess.
 55. The method of claim 54 whereincovering a portion of the microelectronic component comprises coveringthe connector with the mold compound and substantially filling theopening with the mold compound.
 56. A method of manufacturing amicroelectronic component assembly, comprising: attaching a componentsurface of a microelectronic component to a die attach surface of asubstrate, wherein the substrate has first and second surfaces spacedapart by a substrate thickness, the die attach surface is spaced from aplane of the first surface by a reduced thickness that is less than thesubstrate thickness, and a sidewall extends from the second surface fothe die atach surface; electrically coupling a component contact carriedby the component surface to a substrate contact carried by the firstsurface of the substrate with a connector, the connector extendingthrough an opening through the reduced thickness; and covering a portionof the microelectronic component with a mold compound, the mold compoundincluding a first component and a filler having a mean particle size atleast as large as a width of a gap between a periphery of themicroelectronic component and the sidewall of the substrate.
 57. Themethod of claim 56 wherein covering a portion of the microelectroniccomponent comprises disposing a portion of the first component in thegap.
 58. The method of claim 56 wherein covering a portion of themicroelectronic component comprises applying the mold compound to covera back face of the microelectronic component, at least a portion of eachof the first and second surfaces of the substrate with the moldcompound.
 59. The method of claim 56 wherein covering a portion of themicroelectronic component comprises covering the connector with the moldcompound and substantially filling the opening with the mold compound.